DocumentCode
1067003
Title
Detection of slow traps in the oxide of MOS transistors by a new current DLTS technique
Author
Bauza, D.
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble
Volume
30
Issue
6
fYear
1994
fDate
3/17/1994 12:00:00 AM
Firstpage
484
Lastpage
485
Abstract
It is shown that in MOS transistors, the traps in the oxide that interact with the semiconductor by the tunnelling of carriers, induce a transient on the drain current when the device is switched from accumulation to strong inversion. Their density can be extracted as in deep level transient spectroscopy
Keywords
deep level transient spectroscopy; electron traps; hole traps; insulated gate field effect transistors; semiconductor device testing; tunnelling; MOS transistors; MOSFET oxide; accumulation; carrier tunnelling; current DLTS technique; deep level transient spectroscopy; drain current transient; semiconductor; slow traps detection; strong inversion; trap density;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940345
Filename
280554
Link To Document