Title :
A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme
Author :
Arsovski, Igor ; Chandler, Trevis ; Sheikholeslami, Ali
Author_Institution :
Toronto Univ., Ont., Canada
fDate :
1/1/2003 12:00:00 AM
Abstract :
A 256×144-bit TCAM is designed in 0.18-μm CMOS. The proposed TCAM cell uses 4T static storage for increased density. The proposed match-line (ML) sense scheme reduces power consumption by minimizing switching activity of search-lines and limiting voltage swing of MLs. The scheme achieves a match-time of 3 ns and operates at a minimum supply voltage of 1.2 V.
Keywords :
CMOS memory circuits; content-addressable storage; low-power electronics; 1.2 V; 3 ns; 36864 bit; 4T static storage; CMOS process; associative memories; current-race sensing scheme; low power operation; match-line sense scheme; power consumption reduction; switching activity minimisation; ternary CAM; ternary content-addressable memory; CADCAM; Circuit simulation; Clocks; Computer aided manufacturing; Energy consumption; MOS devices; Multilevel systems; Pattern matching; Random access memory; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.806264
