Title :
Mechanism of drain current droop in GaAs MESFETs
Author :
Ladbrooke, P.H. ; Jastrzebski, A.K. ; Donarski, R.J. ; Barnaby, J.E.
Author_Institution :
GuAs Code Ltd, Cambridge
fDate :
10/12/1995 12:00:00 AM
Abstract :
The mechanisms responsible for the drain current droop in GaAs MESFETs are discussed and their relative contributions evaluated. Contrary to a common belief that the cause is mainly self-heating, it is shown on the example of a power MESFET that deep level effects (surface states and bulk traps) have a higher contribution
Keywords :
III-V semiconductors; deep levels; gallium arsenide; power MESFET; surface states; GaAs; bulk traps; deep levels; drain current droop; power MESFET; self-heating; surface states;
Journal_Title :
Electronics Letters
