Title :
Partially relaxed multiquantum well InGaAs/AlGaAs heterojunction phototransistor operating at 955-970 nm
Author :
Sjolund, O. ; Ghisoni, M. ; Larsson, A. ; Thordson, J. ; Andersson, Tyrone
Author_Institution :
Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Goteborg
fDate :
10/12/1995 12:00:00 AM
Abstract :
The authors report a partially relaxed InGaAs multiquantum well based heterojunction phototransistor with high responsivity in the transmission window of the GaAs substrate which shows no degradation in performance due to lattice relaxation. The peak responsivity increased from 10 A/W at 0.5 μW incident optical power to 100 A/W at 50 μW corresponding to a current gain of 925. At 8 V collector-emitter voltage the responsivity is constant from 957 to 973 nm, with a responsivity of 5 A/W at 0.5 μW and 55 A/W at 50 μW
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; phototransistors; semiconductor quantum wells; 0.5 to 50 muW; 8 V; 955 to 970 nm; InGaAs-AlGaAs; collector-emitter voltage; current gain; heterojunction phototransistor; incident optical power; lattice relaxation; multiquantum well; responsivity; transmission window;
Journal_Title :
Electronics Letters
