DocumentCode
1067200
Title
Partially relaxed multiquantum well InGaAs/AlGaAs heterojunction phototransistor operating at 955-970 nm
Author
Sjolund, O. ; Ghisoni, M. ; Larsson, A. ; Thordson, J. ; Andersson, Tyrone
Author_Institution
Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Goteborg
Volume
31
Issue
21
fYear
1995
fDate
10/12/1995 12:00:00 AM
Firstpage
1870
Lastpage
1871
Abstract
The authors report a partially relaxed InGaAs multiquantum well based heterojunction phototransistor with high responsivity in the transmission window of the GaAs substrate which shows no degradation in performance due to lattice relaxation. The peak responsivity increased from 10 A/W at 0.5 μW incident optical power to 100 A/W at 50 μW corresponding to a current gain of 925. At 8 V collector-emitter voltage the responsivity is constant from 957 to 973 nm, with a responsivity of 5 A/W at 0.5 μW and 55 A/W at 50 μW
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; phototransistors; semiconductor quantum wells; 0.5 to 50 muW; 8 V; 955 to 970 nm; InGaAs-AlGaAs; collector-emitter voltage; current gain; heterojunction phototransistor; incident optical power; lattice relaxation; multiquantum well; responsivity; transmission window;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
475024
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