DocumentCode
1067237
Title
Vapor phase epitaxially grown InGaAs photodiodes
Author
Susa, Nobuhiko ; Yamauchi, Yoshiharu ; Kanbe, Hiroshi
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume
27
Issue
1
fYear
1980
fDate
1/1/1980 12:00:00 AM
Firstpage
92
Lastpage
98
Abstract
Vapor phase Inx Ga1-x As photodiodes were fabricated for compositions 
. p+-layers were made by Zn diffusion using ZnAs2 as a Source. Dark currents at half the breakdown voltage for 
= 0.15, 0.17, and 0.31 were as low as those fabricated by liquid phase epitaxy. The planar structure is superior to a mesa structure with respect to dark current. Dark currents for various compositions were compared with theoretical estimation. Current multiplications in planar diodes with 
were about 10 at the junction center and 200-300 at the periphery. Response time to 1.06-µm Nd: YAG mode locked laser pulses was measured to be about 250 ps.
. p+-layers were made by Zn diffusion using ZnAs = 0.15, 0.17, and 0.31 were as low as those fabricated by liquid phase epitaxy. The planar structure is superior to a mesa structure with respect to dark current. Dark currents for various compositions were compared with theoretical estimation. Current multiplications in planar diodes with were about 10 at the junction center and 200-300 at the periphery. Response time to 1.06-µm Nd: YAG mode locked laser pulses was measured to be about 250 ps.Keywords
Dark current; Delay; Diodes; Epitaxial growth; Estimation theory; Indium gallium arsenide; Laser mode locking; Photodiodes; Pulse measurements; Zinc;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19826
Filename
1480619
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