DocumentCode :
1067237
Title :
Vapor phase epitaxially grown InGaAs photodiodes
Author :
Susa, Nobuhiko ; Yamauchi, Yoshiharu ; Kanbe, Hiroshi
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume :
27
Issue :
1
fYear :
1980
fDate :
1/1/1980 12:00:00 AM
Firstpage :
92
Lastpage :
98
Abstract :
Vapor phase Inx Ga1-x As photodiodes were fabricated for compositions 
. p+-layers were made by Zn diffusion using ZnAs2 as a Source. Dark currents at half the breakdown voltage for 
= 0.15, 0.17, and 0.31 were as low as those fabricated by liquid phase epitaxy. The planar structure is superior to a mesa structure with respect to dark current. Dark currents for various compositions were compared with theoretical estimation. Current multiplications in planar diodes with 
were about 10 at the junction center and 200-300 at the periphery. Response time to 1.06-µm Nd: YAG mode locked laser pulses was measured to be about 250 ps.
. p+-layers were made by Zn diffusion using ZnAs = 0.15, 0.17, and 0.31 were as low as those fabricated by liquid phase epitaxy. The planar structure is superior to a mesa structure with respect to dark current. Dark currents for various compositions were compared with theoretical estimation. Current multiplications in planar diodes with were about 10 at the junction center and 200-300 at the periphery. Response time to 1.06-µm Nd: YAG mode locked laser pulses was measured to be about 250 ps.Keywords :
Dark current; Delay; Diodes; Epitaxial growth; Estimation theory; Indium gallium arsenide; Laser mode locking; Photodiodes; Pulse measurements; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19826
Filename :
1480619
Link To Document :
