Nonlinear polarization rotation in semiconductor optical amplifiers: theory and application to all-optical flip-flop memories

Author

Dorren, H.J.S. ; Lenstra, Daan ; Liu, Yong ; Hill, Martin T. ; Khoe, Giok-Djan

Author_Institution

Cobra Res. Inst., Eindhoven Univ. of Technol., Netherlands

Volume

39

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

141

Lastpage

148

Abstract

We present a model for polarization-dependent gain saturation in strained bulk semiconductor optical amplifiers. We assume that the polarized optical field can be decomposed into transverse electric and transverse magnetic components that have indirect interaction with each other via the gain saturation. The gain anisotropy due to tensile strain in the amplifier is accounted for by a population imbalance factor. The model is applied to a nonlinear polarization switch, for which results are obtained, that are in excellent agreement with experimental data. Finally, we describe an all-optical flip-flop memory that is based on two coupled nonlinear polarization switches.

Keywords

flip-flops; laser theory; light polarisation; nonlinear optics; optical logic; optical saturation; optical switches; semiconductor device models; semiconductor optical amplifiers; all-optical flip-flop memories; all-optical flip-flop memory; coupled nonlinear polarization switches; gain anisotropy; gain saturation; nonlinear polarization rotation; nonlinear polarization switch; polarization-dependent gain saturation; polarized optical field; population imbalance factor; semiconductor optical amplifiers; strained bulk semiconductor optical amplifiers; tensile strain; transverse electric magnetic components; transverse magnetic components; Flip-flops; Geometrical optics; Magnetic anisotropy; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical polarization; Optical saturation; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2002.806200

Filename

1158816