• DocumentCode
    1067316
  • Title

    HgCdTe photoconductive detector array

  • Author

    Itoh, Makoto ; Takigawa, Hiroshi ; Ueda, Ryuiti

  • Author_Institution
    Fujitsu Laboratories, Ltd., Hyogo-ku, Kobe, Japan
  • Volume
    27
  • Issue
    1
  • fYear
    1980
  • fDate
    1/1/1980 12:00:00 AM
  • Firstpage
    150
  • Lastpage
    154
  • Abstract
    An Hg0.8Cd0.2Te photoconductive array of 200 elements has been developed. The array has uniform detectivity and the mean value of D*(12 µm, 1000, 1) field of view (FOV) 50° at 77 K is 3.2 × 1010cm. Hz1/2. W-1. The array was successfully fabricated under severe control of thermal flow during crystallization, carrier control by doping of indium impurity, and assembly of four chips each with 50 elements.
  • Keywords
    Assembly; Crystallization; Detectors; Doping; Impurities; Indium; Mercury (metals); Photoconductivity; Sensor arrays; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19833
  • Filename
    1480626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067316