DocumentCode :
1067346
Title :
Technology development for InSb infrared imagers
Author :
Wei, Ching-yeu ; Wang, Kang L. ; Taft, E.A. ; Swab, John M. ; Gibbons, Martin D. ; Davern, William E. ; Brow, Dale M.
Author_Institution :
General Electric Coporate Research and Development, Schenectady, NY
Volume :
27
Issue :
1
fYear :
1980
fDate :
1/1/1980 12:00:00 AM
Firstpage :
170
Lastpage :
175
Abstract :
InSb semiconductor technology required for infrared-detector-array fabrications is described. High-quality MOS, MOSFET, and linear and two-dimensional (2D) CID devices have been successfully fabricated. Interface-state densities of the MOS capacitors were determined to be less than 5 × 1010cm-2. eV-1, respectively. These results suggest that self-scanned monolithic arrays could be fabricated. The performance of linear and 2D CID arrays were evaluated in terms of detectivity (D*) and responsivity ( 
). The average D*of a 64- element line array was measured to be 3.4 × 1011cm. Hz1/2. W-1which is 70 percent of that of "background-limited-performance" (BLIP) operation. The was 1 × 10-5V/photon with 10-percent uniformity. The D*and were also obtained for a 32 × 32 2D array.
). The average D*of a 64- element line array was measured to be 3.4 × 1011cm. Hz1/2. W-1which is 70 percent of that of "background-limited-performance" (BLIP) operation. The was 1 × 10-5V/photon with 10-percent uniformity. The D*and were also obtained for a 32 × 32 2D array.Keywords :
Fabrication; Infrared detectors; Infrared imaging; Laboratories; MOSFET circuits; Research and development; Semiconductor films; Sensor arrays; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19836
Filename :
1480629
Link To Document :
