Title :
A device model for buried-channel CCD´s and MOSFET´s with Gaussian impurity profiles
Author :
Taylor, Geoffrey W. ; Chatterjee, Pallab K. ; Chao, Hu H.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
fDate :
1/1/1980 12:00:00 AM
Abstract :
Analytical forms are developed for the buried-channel CCD and its counterpart the buried-channel MOSFET having Gaussian impurity charge profiles. The results are able to describe all important potentials, charges, distances, and currents in terms of the profile structural parameters. The model will be quite useful in the design of buried-channel circuits for VLSI applications where it is expected that highly nonlinear profiles will be obtained by the use of very shallow ion implants and minimal high-temperature processing.
Keywords :
Charge coupled devices; Doping; Implants; Impurities; Linear approximation; MOSFET circuits; Shape; Silicon; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19840
