Title :
High power narrow beam single mode ARROW-type InGaAs/InGaAsP/InGaP diode lasers
Author :
Bhattacharya, Avik ; Mawst, L.J. ; Nesnidal, M.P. ; Lopez, J. ; Botez, D.
Author_Institution :
Wisconsin Univ., Madison, WI
fDate :
10/12/1995 12:00:00 AM
Abstract :
The authors have obtained, from 20 μm aperture 0.98 μm wavelength three-core ARROW-type InGaAs/InGaAsP/InGaP diode lasers, a diffraction-limited beam pattern up to 0.55 W peak-pulsed power with 78% of the light in the central lobe and near diffraction-limited-beam operation to 0.7 W. Interelement optical absorption loss is found to be important for improved beam quality at high drive levels, in good agreement with theory
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical losses; semiconductor lasers; 0.55 W; 0.98 micrometre; 20 micron; ARROW-type diode lasers; InGaAs-InGaAsP-InGaP; beam quality; diffraction-limited beam pattern; drive levels; interelement optical absorption loss; narrow beam lasers; near diffraction-limited-beam operation; peak-pulsed power; single mode lasers;
Journal_Title :
Electronics Letters
