Title :
1.3 μm InGaAs/GaAs strained quantum well lasers with InGaP cladding layer
Author :
Uchida, Tomoyuki ; Kurakake, H. ; Soda, H. ; Yamazaki, Shumpei
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
3/31/1994 12:00:00 AM
Abstract :
Using MOVPE, we fabricated strained quantum well 1.3 μm lasers with an InGaP cladding layer on a GaAs substrate. The lasers had a high gain coefficient of 60 cm-1. Lasers with high reflection facets had a low threshold current density of 500 A/cm2, and a high characteristic temperature of 100 K
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 mum; 100 K; GaAs; GaAs substrate; InGaAs-GaAs; InGaAs/GaAs strained quantum well lasers; InGaP; InGaP cladding layer; MOVPE; high characteristic temperature; high gain coefficient; high reflection facets; low threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940378
