Title :
High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with 18 GHz bandwidth
Author :
Klepser, B.-U.H. ; Spicher, J. ; Beck, M. ; Bergamaschi, C. ; Patrick, W. ; Bachtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich
fDate :
10/12/1995 12:00:00 AM
Abstract :
An integrated photoreceiver using a pin photodiode and GaInAs-AlInAs HEMTs has been fabricated and characterised. The circuitry consists of a high input impedance front-end followed by an equalising second stage to compensate for the input capacitance. A bandwidth of 18 GHz was achieved which is, to the authors´ knowledge, the highest reported bandwidth for an integrated photoreceiver on InP
Keywords :
HEMT integrated circuits; III-V semiconductors; compensation; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; 18 GHz; GaInAs-AlInAs; GaInAs/AlInAs HEMTs; InP; InP substrate; PIN photodiode; broadband operation; high input impedance front-end; input capacitance compensation; monolithically integrated photoreceiver; pin-HEMT photoreceiver; wideband operation;
Journal_Title :
Electronics Letters
