DocumentCode
1067488
Title
Design windows for low-high-low GaAs IMPATT´s
Author
Namordi, Mooshi R. ; Coleman, Donald J., Jr.
Author_Institution
Texas Instruments Incorporated, Dallas, TX
Volume
27
Issue
1
fYear
1980
fDate
1/1/1980 12:00:00 AM
Firstpage
282
Lastpage
286
Abstract
An idealized device model is employed to determine the optimum material parameters for low-high-low (LHL) GaAs IMPATT´s. Experimental efficiencies of 15-GHz devices indicate the model is of considerable utility for LHL GaAs IMPATT design.
Keywords
Buffer layers; Diodes; Doping; Gallium arsenide; Helium; Impurities; Ohmic contacts; Radio frequency; Space technology; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19851
Filename
1480644
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