Title :
A high-voltage MOSFET in polycrystalline silicon
Author :
Mohammadi, Farrokh ; Saraswat, Krishna C. ; Meindl, James D.
Author_Institution :
Stanford University, Stanford, CA
fDate :
1/1/1980 12:00:00 AM
Abstract :
A high-voltage enhancement-type MOSFET, fabricated in undoped thin polycrystalline silicon films deposited on oxidized single-crystal silicon substrate is described. The behavior is fully explained by investigation of low-and high-voltage performances of the device. Ease of fabrication and high-voltage breakdown characteristics are emphasized. From the device characteristics, calculations have been done to determine hole mobility in polycrystalline silicon.
Keywords :
Aluminum; Crystallization; Electric breakdown; Etching; Fabrication; MOSFET circuits; Semiconductor thin films; Silicon; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19854
