Title :
A 600-volt MOSFET designed for low on-resistance
Author :
Temple, Victor A K ; Love, Robert P. ; Gray, Peter V.
Author_Institution :
General Electric Company, Schenectady, NY
fDate :
2/1/1980 12:00:00 AM
Abstract :
A 600-V vertical power MOSFET with low on-resistance is described. The low resistance is achieved by means of achieving near-ideal drain junction breakdown voltage and reduced drain spreading resistance from the use of an extended channel design. The various tradeoffs inherent in the design are discussed. Both calculated and experimental data are presented. The remote source configuration of the experimental device is also discussed.
Keywords :
Breakdown voltage; Conductivity; Electron devices; Linearity; MOSFET circuits; Manufacturing; Power MOSFET; Silicon; Substrates; Surface resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19866
