Title :
Computer analysis of breakdown mechanism in planar power MOSFET´s
Author :
Ochi, Shikayuki ; Okabe, Takeaki ; Yoshida, Isao ; Yamaguchi, Ken ; Nagata, Minoru
Author_Institution :
Hitachi Ltd., Kokubunji, Tokyo, Japan
fDate :
2/1/1980 12:00:00 AM
Abstract :
Breakdown mechanism in planar power MOSFET´s having high breakdown voltage is investigated. Precise electric field distribution is obtained by two-dimensional numerical analysis. This field distribution is used to optimize device structure and to predict breakdown voltage. A technique for reducing the electric field on the silicon surface by equalizing its distribution is presented.
Keywords :
Avalanche breakdown; Electric breakdown; Impurities; MOSFET circuits; Numerical analysis; Power MOSFET; Rain; Silicon; Surface resistance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19874
