• DocumentCode
    1067725
  • Title

    65/90 GHz complementary HBT technology

  • Author

    Tserng, Hua-Quen ; Kim, T.S.

  • Volume
    30
  • Issue
    7
  • fYear
    1994
  • fDate
    3/31/1994 12:00:00 AM
  • Firstpage
    597
  • Lastpage
    598
  • Abstract
    A monolithic complementary HBT technology with record microwave performance is reported. Pnp HBTs have achieved an fmax of 65 GHz; Npn HBTs on the same wafer achieved an fmax of 90 GHz. These fmax values are the highest reported for any complementary technology; to the authors´ knowledge, 65 GHz is the highest fmax ever reported for a hole-transport device
  • Keywords
    bipolar integrated circuits; heterojunction bipolar transistors; microwave integrated circuits; semiconductor technology; 65 to 90 GHz; 65/90 GHz complementary HBT technology; fmax; hole-transport device; microwave performance; monolithic complementary HBT technology; npn HBTs; pnp HBTs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940382
  • Filename
    280623
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067725