DocumentCode :
1067725
Title :
65/90 GHz complementary HBT technology
Author :
Tserng, Hua-Quen ; Kim, T.S.
Volume :
30
Issue :
7
fYear :
1994
fDate :
3/31/1994 12:00:00 AM
Firstpage :
597
Lastpage :
598
Abstract :
A monolithic complementary HBT technology with record microwave performance is reported. Pnp HBTs have achieved an fmax of 65 GHz; Npn HBTs on the same wafer achieved an fmax of 90 GHz. These fmax values are the highest reported for any complementary technology; to the authors´ knowledge, 65 GHz is the highest fmax ever reported for a hole-transport device
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; microwave integrated circuits; semiconductor technology; 65 to 90 GHz; 65/90 GHz complementary HBT technology; fmax; hole-transport device; microwave performance; monolithic complementary HBT technology; npn HBTs; pnp HBTs;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940382
Filename :
280623
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1067725
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