• DocumentCode
    1067745
  • Title

    Backgating characteristics of 0.1 μm gate In0.3Ga0.47As/In0.52Al0.48 As/InP MODFETs with Er-doped In0.52Al0.48As buffer layer

  • Author

    Yang, H.-P.D. ; Bhattacharya, Pallab ; Chen, Yen-Chi

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
  • Volume
    30
  • Issue
    7
  • fYear
    1994
  • fDate
    3/31/1994 12:00:00 AM
  • Firstpage
    598
  • Lastpage
    600
  • Abstract
    Extremely low backgating currents (~30-40 μA) are measured in 0.1 μm gate In0.3Ga0.47As/In0.52Al 0.48As/InP MODFETs having a new buffer layer material, Er-doped In0.52Al0.48As, grown at 500°C by MBE. Rare-earth doped GaAs and the lattice-matched ternary have resistivity ~102-105 Ω-cm depending on Er-doping level
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 0.1 mum; 500 C; Er-doped In0.52Al0.48As; Er-doped In0.52Al0.48As buffer layer; Er-doping level; In0.3Ga0.47As/In0.52Al0.48 As/InP MODFETs; InGaAs-InAlAs-InP; backgating characteristics; buffer layer material; lattice-matched ternary; low backgating currents; rare-earth doped GaAs; resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940403
  • Filename
    280624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067745