DocumentCode :
1067745
Title :
Backgating characteristics of 0.1 μm gate In0.3Ga0.47As/In0.52Al0.48 As/InP MODFETs with Er-doped In0.52Al0.48As buffer layer
Author :
Yang, H.-P.D. ; Bhattacharya, Pallab ; Chen, Yen-Chi
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Volume :
30
Issue :
7
fYear :
1994
fDate :
3/31/1994 12:00:00 AM
Firstpage :
598
Lastpage :
600
Abstract :
Extremely low backgating currents (~30-40 μA) are measured in 0.1 μm gate In0.3Ga0.47As/In0.52Al 0.48As/InP MODFETs having a new buffer layer material, Er-doped In0.52Al0.48As, grown at 500°C by MBE. Rare-earth doped GaAs and the lattice-matched ternary have resistivity ~102-105 Ω-cm depending on Er-doping level
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 0.1 mum; 500 C; Er-doped In0.52Al0.48As; Er-doped In0.52Al0.48As buffer layer; Er-doping level; In0.3Ga0.47As/In0.52Al0.48 As/InP MODFETs; InGaAs-InAlAs-InP; backgating characteristics; buffer layer material; lattice-matched ternary; low backgating currents; rare-earth doped GaAs; resistivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940403
Filename :
280624
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1067745
بازگشت