• DocumentCode
    1067753
  • Title

    Low frequency noise in p+-GaAs with non-alloyed contacts

  • Author

    Chen, Xiao Yuan ; Leys, M.R. ; Ragay, F.W.

  • Author_Institution
    Dept. of Electr. Eng., Eindhoven Univ. of Technol.
  • Volume
    30
  • Issue
    7
  • fYear
    1994
  • fDate
    3/31/1994 12:00:00 AM
  • Firstpage
    600
  • Lastpage
    601
  • Abstract
    Measurements of 1/f noise were performed including and excluding the influence of the contacts formed by metallic aluminum layers (MBE) deposited on the p+-type GaAs (MBE). The results show that the MBE process can produce non-alloyed ohmic contacts free of noise. The 1/f noise of bulk p+-GaAs is characterised by αlatt≃5×10-4
  • Keywords
    gallium arsenide; metallisation; molecular beam epitaxial growth; ohmic contacts; random noise; semiconductor technology; 1/f noise measurements; GaAs; MBE deposited; low frequency noise; metallic aluminum layers; nonalloyed contacts; nonalloyed ohmic contacts; p+-GaAs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940379
  • Filename
    280625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067753