• DocumentCode
    1067777
  • Title

    Measurement of plasma electron density generated by a semiconductor bridge (SCB)

  • Author

    Kim, Jung-Ho ; Schamiloglu, Edl ; Jungling, K.C.

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
  • Volume
    30
  • Issue
    7
  • fYear
    1994
  • fDate
    3/31/1994 12:00:00 AM
  • Firstpage
    603
  • Lastpage
    604
  • Abstract
    To gain better understanding of semiconductor bridge (SCB) discharge behaviour, we have measured the plasma electron density generated by SCBs using a microwave resonator probe technique in a vacuum (⩽10-5 torr). This method is superior to Langmuir probes in this application because of sheath effects, small bridge areas, and unknown fraction of multiple ions
  • Keywords
    Langmuir probes; bridge instruments; plasma density; plasma diagnostic techniques; Langmuir probes; discharge behaviour; microwave resonator probe technique; multiple ions; plasma electron density; semiconductor bridge; sheath effects; small bridge areas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940380
  • Filename
    280627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067777