DocumentCode :
1067853
Title :
The dynamics of the thyristor turn-on process
Author :
Adler, Michael S. ; Temple, Victor A K
Author_Institution :
General Electric Company, Schenectady, NY, USA
Volume :
27
Issue :
2
fYear :
1980
fDate :
2/1/1980 12:00:00 AM
Firstpage :
483
Lastpage :
494
Abstract :
In this paper, the early turn-on phases of thyristors axe examined using an exact two-dimensional numerical model. Two different thyristor structures are examined one with and one without an emitter short. Using three-dimensional plots of the carrier densities and observing the time dependence of the junction voltages, four separate turn-on phases are found. These phases are identified as an initial charging phase, a p-base delay phase, an n-base delay phase, and the final phase where the device is latched in an on-state and the anode current begins to flow. During each of the four phases, details of the carrier motion are investigated in order to help understand the physics of the turn-on process. Finally, experimental data on the anode current buildup for one of the device types are presented and compared with the predicted results.
Keywords :
Cathodes; Doping; Electrons; Equations; Semiconductor devices; Semiconductor impurities; Semiconductor process modeling; Substrates; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19887
Filename :
1480680
Link To Document :
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