• DocumentCode
    1067872
  • Title

    The charge-handling capacity of buried-channel structures under hot-electron conditions

  • Author

    Hess, Karl ; Shichijo, Hisashi

  • Author_Institution
    University of Illinois at Urbana-Champaign, Urbana, IL, USA
  • Volume
    27
  • Issue
    2
  • fYear
    1980
  • fDate
    2/1/1980 12:00:00 AM
  • Firstpage
    503
  • Lastpage
    504
  • Abstract
    Hot-electron effects have been included in calculations of the charge-handling capacity of buffed-channel MOS structures. The calculation shows that the charge-handling capacity is drastically reduced by high electric fields parallel to the interface. For an electric field of 1.5-5 × 104V/cm the maximum charge capacity decreases by at least a factor of 2.
  • Keywords
    Charge carriers; Charge coupled devices; Distribution functions; Electron traps; Heating; Interface states; Potential well; Scattering; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19889
  • Filename
    1480682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1067872