DocumentCode
1067979
Title
Static negative resistance in calculated MESFET drain characteristics
Author
Norton, David E. ; Hayes, Russell E.
Volume
27
Issue
3
fYear
1980
fDate
3/1/1980 12:00:00 AM
Firstpage
570
Lastpage
572
Abstract
Static negative-resistance regions in MESFET drain current-voltage characteristics are sometimes observed in results obtained by computer-modeling techniques. This paper shows that in some cases these negative-resistance regions may be numerically induced by an inappropriate choice of the spatial mesh size used in the calculation. A criterion for choosing a sufficiently small mesh size is given.
Keywords
Computational modeling; Computer simulation; Epitaxial layers; Equations; Indium phosphide; MESFETs; Numerical simulation; Spatial resolution; Substrates; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19900
Filename
1480693
Link To Document