Improved Low-Voltage-Triggered SCR Structure for RF-ESD Protection

Author

Fei Ma ; Yan Han ; Shurong Dong ; Meng Miao ; Hailiang Liang

Author_Institution

Inst. of Microelectron. & Optoelectron., Zhejiang Univ., Hangzhou, China

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

1050

Lastpage

1052

Abstract

An improved low-voltage-triggered silicon-controlled rectifier is proposed for on-chip electrostatic discharge (ESD) protection in a 65-nm radio frequency CMOS. The experimental results show that it has a very low intrinsic capacitance of 18 fF at zero bias, a low and tunable trigger voltage in the range of 2.2-4.5 V, a low leakage current of 0.3 nA, and a low overshoot voltage under very fast ESD pulse. It achieves a 1.9-A failure current with only 50×9-μm² layout area.

Keywords

CMOS integrated circuits; electrostatic discharge; leakage currents; radiofrequency integrated circuits; rectifiers; silicon; RF-ESD protection; SCR structure; Si; current 0.3 nA; current 1.9 A; electrostatic discharge; leakage current; radiofrequency CMOS; silicon controlled rectifier; size 65 nm; voltage 2.2 V to 4.5 V; CMOS integrated circuits; Electrostatic discharges; Leakage currents; Rectifiers; Thyristors; Electrostatic discharge (ESD) protection; radio frequency (RF); silicon-controlled rectifier (SCR); trigger voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2265411

Filename

6547680