Title :
40 GHz bandwidth amplifier IC using AlGaAs/GaAs ballistic collection transistors with carbon-doped bases
Author :
Sano, Eiichi ; Yamahata, S. ; Matsuoka, Yasutaka
Author_Institution :
NTT LSI Labs., Atsugi
fDate :
4/14/1994 12:00:00 AM
Abstract :
An fmax of 192 GHz is achieved by a ballistic collection transistor with a launcher and a heavily carbon-doped base. A two-stage direct-coupled amplifier IC fabricated using the transistors provides a high gain of 16.8 dB with a 3 dB-down frequency of 40 GHz
Keywords :
DC amplifiers; III-V semiconductors; MMIC; S-parameters; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers; 16.8 dB; 192 GHz; 3 dB-down frequency; 40 GHz; AlGaAs-GaAs:C; AlGaAs/GaAs ballistic collection transistors; S-parameters; band engineered HBT; broadband amplifier; heavily C-doped base; high bandwidth; launcher; two-stage direct-coupled amplifier IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940446
