Title :
High gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology
Author :
Feng, Songhe ; Seitzer, D.
Author_Institution :
Fraunhofer-Inst. for Integrated Circuits, Erlangen
fDate :
4/14/1994 12:00:00 AM
Abstract :
A high voltage gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology is presented. The amplifier principally consists of a differential input stage and a high gain cascode stage which was developed by Toumazou and Haigh (1990). On-wafer measurement verifies that the amplifier achieves an open-loop voltage gain of 73 dB and a unity-gain bandwidth of 1.78 GHz
Keywords :
III-V semiconductors; differential amplifiers; field effect integrated circuits; gallium arsenide; linear integrated circuits; operational amplifiers; 0.5 mum; 1.78 GHz; 73 dB; GaAs; GaAs E/D HEMT technology; common mode rejection ratio; differential input stage; frequency response; high gain cascode stage; high voltage gain operational amplifier; on-wafer measurement; open-loop voltage gain; unity-gain bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940467
