Title :
Plasma processes involved in dry processing
Author :
Griffin, S.T. ; Verdeyen, J.T.
Author_Institution :
University of Illinois, Champaign, IL
fDate :
3/1/1980 12:00:00 AM
Abstract :
In this brief the production rate of CF3and F from CF4by resonant processes involving He metastables is shown not to correlate with the etch rate of Si3N4(SiO2). Additional spectroscopic results suggest a second-order process is responsible for the production of the most active etchant species.
Keywords :
Cathodes; Etching; Helium; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Probes; Production; Resonance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19906
