• DocumentCode
    1068043
  • Title

    Plasma processes involved in dry processing

  • Author

    Griffin, S.T. ; Verdeyen, J.T.

  • Author_Institution
    University of Illinois, Champaign, IL
  • Volume
    27
  • Issue
    3
  • fYear
    1980
  • fDate
    3/1/1980 12:00:00 AM
  • Firstpage
    602
  • Lastpage
    604
  • Abstract
    In this brief the production rate of CF3and F from CF4by resonant processes involving He metastables is shown not to correlate with the etch rate of Si3N4(SiO2). Additional spectroscopic results suggest a second-order process is responsible for the production of the most active etchant species.
  • Keywords
    Cathodes; Etching; Helium; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Probes; Production; Resonance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19906
  • Filename
    1480699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068043