Title :
Standardized terminology for oxide charges associated with thermally oxidized silicon
Author_Institution :
Fairchild Camera and Instrument Corporation, Palo Alto, CA
fDate :
3/1/1980 12:00:00 AM
Abstract :
Standarized terminology for oxide charges associated with the thermally oxidized silicon system is presented. This terminology is recommended by a committee established by the Electronics Division of the Electrochemical Society and the IEEE Semiconductor Interface Specialists Conference. All engineers and scientists concerned with oxide charges in silicon semiconductor applications are urged to adopt this terminology.
Keywords :
Cameras; Instruments; Laboratories; MOSFETs; Meetings; NIST; Silicon; Societies; Telephony; Terminology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19908
