• DocumentCode
    1068064
  • Title

    Standardized terminology for oxide charges associated with thermally oxidized silicon

  • Author

    Deal, Bruce E.

  • Author_Institution
    Fairchild Camera and Instrument Corporation, Palo Alto, CA
  • Volume
    27
  • Issue
    3
  • fYear
    1980
  • fDate
    3/1/1980 12:00:00 AM
  • Firstpage
    606
  • Lastpage
    608
  • Abstract
    Standarized terminology for oxide charges associated with the thermally oxidized silicon system is presented. This terminology is recommended by a committee established by the Electronics Division of the Electrochemical Society and the IEEE Semiconductor Interface Specialists Conference. All engineers and scientists concerned with oxide charges in silicon semiconductor applications are urged to adopt this terminology.
  • Keywords
    Cameras; Instruments; Laboratories; MOSFETs; Meetings; NIST; Silicon; Societies; Telephony; Terminology;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19908
  • Filename
    1480701