Title :
Dual mirror and resonant cavity operating at 1.3 and 1.55 μm
Author :
Murtaza, Syed Shariyar ; Srinivasan, A. ; Shih, Y.C. ; Campbell, Joe C. ; Streetman, B.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
fDate :
4/14/1994 12:00:00 AM
Abstract :
A GaAs/AlAs Bragg mirror with two reflectivity bands centred at 1.3 and 1.55 μm is reported. High reflectivity is achieved in both bands and good agreement is observed between measured and simulated reflectivities. A microcavity structure is proposed that is resonant at both wavelengths. Such structures can be used to enhance the absorption or emission of signals at the two wavelengths
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; laser cavity resonators; mirrors; reflectivity; 1.3 mum; 1.55 mum; GaAs-AlAs; GaAs/AlAs Bragg mirror; dual peak mirrors; high reflectivity; microcavity structure; reflectivity bands; resonant cavity; signal absorption enhancement; signal emission enhancement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940429
