DocumentCode
1068085
Title
Dual mirror and resonant cavity operating at 1.3 and 1.55 μm
Author
Murtaza, Syed Shariyar ; Srinivasan, A. ; Shih, Y.C. ; Campbell, Joe C. ; Streetman, B.G.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Volume
30
Issue
8
fYear
1994
fDate
4/14/1994 12:00:00 AM
Firstpage
643
Lastpage
645
Abstract
A GaAs/AlAs Bragg mirror with two reflectivity bands centred at 1.3 and 1.55 μm is reported. High reflectivity is achieved in both bands and good agreement is observed between measured and simulated reflectivities. A microcavity structure is proposed that is resonant at both wavelengths. Such structures can be used to enhance the absorption or emission of signals at the two wavelengths
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; laser cavity resonators; mirrors; reflectivity; 1.3 mum; 1.55 mum; GaAs-AlAs; GaAs/AlAs Bragg mirror; dual peak mirrors; high reflectivity; microcavity structure; reflectivity bands; resonant cavity; signal absorption enhancement; signal emission enhancement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940429
Filename
280658
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