DocumentCode :
1068140
Title :
Calibration and Characterization of Self-Powered Floating-Gate Usage Monitor With Single Electron per Second Operational Limit
Author :
Huang, Chenling ; Lajnef, Nizar ; Chakrabartty, Shantanu
Author_Institution :
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
Volume :
57
Issue :
3
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
556
Lastpage :
567
Abstract :
Self-powered monitoring refers to a signal processing technique where the computational power is harvested directly from the signal being monitored. In this paper, we present the design and calibration of a CMOS event counter for long-term, self-powered mechanical usage monitoring. The counter exploits a log-linear response of the hot-electron injection process on a floating-gate transistor when biased in weak-inversion. By configuring an array of floating-gate injectors to respond to different amplitude levels of the input signal, a complete analog processor has been designed that implements a level counting algorithm, which is widely used in mechanical usage monitoring. Measured results from a fabricated prototype in a 0.5-??m CMOS process demonstrate that the processor can sense, store and compute over 105 usage cycles with an injection limit approaching one single electron per second and with a counting resolution of 5 bits. This paper also presents a calibration algorithm that is used for compensating the variations which arise due to device mismatch, power supply and temperature fluctuations. The maximum current rating of the fabricated analog processor has been measured to be less than 160 nA making it ideal for practical self-powered sensing applications.
Keywords :
CMOS analogue integrated circuits; MOSFET; analogue processing circuits; calibration; counting circuits; energy harvesting; hot carriers; low-power electronics; CMOS event counter design; CMOS process; analog processor; calibration; computational power harvesting; energy harvesting processors; floating-gate injectors; floating-gate transistor; hot-electron injection process; injection limit; level counting algorithm; log-linear response; maximum current rating; self-powered floating-gate usage monitor; self-powered mechanical usage monitoring; self-powered sensing applications; signal processing technique; single electron per second operational limit; size 0.5 mum; temperature fluctuations; Event monitoring; floating-gate transistors; impact-ionized hot-electron injection; level-crossing algorithms; self-powering; structural health monitoring; subthreshold analog circuits; ultralow power sensors;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2009.2024976
Filename :
5071181
Link To Document :
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