• DocumentCode
    1068198
  • Title

    Design considerations for a-Si solar cells

  • Author

    Dalal, Vikram L.

  • Author_Institution
    University of Delaware, Newark, DE
  • Volume
    27
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    662
  • Lastpage
    670
  • Abstract
    Amorphous Si (a-Si) is potentially an attractive material for thin-film solar cells. However, its potential for high-efficiency devices to date has not been realized. In this paper, we examine the design considerations which can be used to develop high-efficiency devices from a-Si. The design analysis takes full advantage of the flexibility in bandgap and other material properties offered by a-Si. Several structures, such as light-trapped cells, graded layer cells, and tandem junction a-Si/a-Si cells are analyzed in detail for collection efficiency, Voc, and fill factors. It is shown that using these innovative structures, realistic conversion efficiencies exceeding 10 percent can be realized in a-Si in spite of the very low diffusion lengths (∼0.1 µm). Technological considerations for achieving such structures are also discussed.
  • Keywords
    Absorption; Crystallization; Doping; Material properties; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Semiconductor thin films; Solar power generation; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19920
  • Filename
    1480713