DocumentCode
1068198
Title
Design considerations for a-Si solar cells
Author
Dalal, Vikram L.
Author_Institution
University of Delaware, Newark, DE
Volume
27
Issue
4
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
662
Lastpage
670
Abstract
Amorphous Si (a-Si) is potentially an attractive material for thin-film solar cells. However, its potential for high-efficiency devices to date has not been realized. In this paper, we examine the design considerations which can be used to develop high-efficiency devices from a-Si. The design analysis takes full advantage of the flexibility in bandgap and other material properties offered by a-Si. Several structures, such as light-trapped cells, graded layer cells, and tandem junction a-Si/a-Si cells are analyzed in detail for collection efficiency, Voc , and fill factors. It is shown that using these innovative structures, realistic conversion efficiencies exceeding 10 percent can be realized in a-Si in spite of the very low diffusion lengths (∼0.1 µm). Technological considerations for achieving such structures are also discussed.
Keywords
Absorption; Crystallization; Doping; Material properties; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Semiconductor thin films; Solar power generation; Sputtering;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19920
Filename
1480713
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