X-band low-phase noise oscillator employing substrate integrated waveguide dual-mode filter

Author

Ziqiang Yang ; Bangyu Luo ; Jun Dong ; Tao Yang

Author_Institution

Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

51

Issue

6

fYear

2015

fDate

3 19 2015

Firstpage

494

Lastpage

495

Abstract

A novel low-phase noise oscillator employing a substrate integrated waveguide (SIW) dual-mode bandpass filter as a frequency stabilisation element within its feedback loop is proposed. The SIW dual-mode filter is implemented based on the use of the two degenerate modes (TE₁₀₂ and TE₂₀₁) and has a larger group delay peak than the conventional SIW cavity resonator. By taking advantage of the large group delay peak, the phase noise of the oscillator has significant improvement. An X-band oscillator with a GaAs HEMT packaged transistor has been designed and measured. At an oscillation frequency of 9.04 GHz, the measured phase noise is -111.9 dBc/Hz at 100 kHz offset. The output power is 6.1 dBm and the figure of merit is -198 dBc/Hz.

Keywords

III-V semiconductors; band-pass filters; circuit noise; gallium arsenide; high electron mobility transistors; oscillators; phase noise; semiconductor device noise; semiconductor device packaging; substrate integrated waveguides; waveguide filters; GaAs; HEMT packaged transistor; SIW cavity resonator; SIW dual-mode bandpass filter; TE₁₀₂ mode; TE₂₀₁ mode; X-band low-phase noise oscillator; feedback loop; frequency 9.04 GHz; frequency stabilisation element; substrate integrated waveguide dual-mode bandpass filter;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.4106

Filename

7062191