DocumentCode :
1068272
Title :
Modeling of chemical-mechanical polishing: a review
Author :
Nanz, Gerd ; Camilletti, Lawrence E.
Author_Institution :
Digital Equip. Corp., Vienna, Austria
Volume :
8
Issue :
4
fYear :
1995
fDate :
11/1/1995 12:00:00 AM
Firstpage :
382
Lastpage :
389
Abstract :
This paper gives a survey of the status of today´s modeling of chemical-mechanical polishing (CMP). Most existing models describe specific aspects of CMP, such as the flow of the slurry or the bending of the polishing pad. However, as yet no model describes the entire available process. This paper critically reviews existing models with respect to generality, in particular, the different assumptions of the models are investigated. Furthermore, the models are compared and the controversial treatment of physical effects is discussed
Keywords :
polishing; reviews; semiconductor process modelling; chemical-mechanical polishing; modeling; pad bending; review; slurry flow; Abrasives; Chemical lasers; Lithography; Logic devices; Packaging; Planarization; Semiconductor device modeling; Silicon compounds; Slurries; Thermal force;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.475179
Filename :
475179
Link To Document :
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