Title :
Modeling of chemical-mechanical polishing: a review
Author :
Nanz, Gerd ; Camilletti, Lawrence E.
Author_Institution :
Digital Equip. Corp., Vienna, Austria
fDate :
11/1/1995 12:00:00 AM
Abstract :
This paper gives a survey of the status of today´s modeling of chemical-mechanical polishing (CMP). Most existing models describe specific aspects of CMP, such as the flow of the slurry or the bending of the polishing pad. However, as yet no model describes the entire available process. This paper critically reviews existing models with respect to generality, in particular, the different assumptions of the models are investigated. Furthermore, the models are compared and the controversial treatment of physical effects is discussed
Keywords :
polishing; reviews; semiconductor process modelling; chemical-mechanical polishing; modeling; pad bending; review; slurry flow; Abrasives; Chemical lasers; Lithography; Logic devices; Packaging; Planarization; Semiconductor device modeling; Silicon compounds; Slurries; Thermal force;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on