Title :
Realisation of doped-channel MISFETs with high breakdown voltage in AlGaAs/InGaAs based material system
Author :
Kaviani, K. ; Madhukar, A. ; Brown, J.J. ; Larson, Lawrence E.
Author_Institution :
Univ. of Southern California, Los Angeles, CA
fDate :
4/14/1994 12:00:00 AM
Abstract :
The authors report the realisation of a doped-channel MISFET with high drain-source and gate-drain breakdown voltages of 41 and -37 V, respectively, and a record low output conductance of 150 μS/mm. These characteristics are achieved through the use of n-type highly doped In 0.26Ga0.74As as the channel material and a short period (AlAs)3(GaAs)4 superlattice as the gate insulator and the lower barrier grown on GaAs (100) substrates
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor superlattices; (AlAs)3(GaAs)4 superlattice; 37 V; 41 V; AlAsGaAs; AlGaAs-InGaAs; AlGaAs/InGaAs based material system; GaAs; GaAs (100) substrates; In0.26Ga0.74As; channel material; doped-channel MISFETs; gate insulator; gate-drain breakdown voltages; high breakdown voltage; high drain-source; low output conductance; lower barrier; n-type; short period;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940444
