Title :
Series resistance and effective channel length extraction of n-channel MOSFET at 77 K
Author :
Ortiz-Conde, Adelmo ; Liou, Juin J. ; Garcia Sanchez, Manuel ; Anderson, Richard L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL
fDate :
4/14/1994 12:00:00 AM
Abstract :
A simple method is presented to extract the effective channel length and series resistance of n-channel MOSFETs having 0.6-2.0 μm mask channel lengths at room and liquid nitrogen temperatures. Our results show that the effective channel length increases and the series resistance decreases when the temperature is reduced from 300 to 77 K
Keywords :
insulated gate field effect transistors; low-temperature techniques; 0.6 to 2.0 mum; 77 K; effective channel length extraction; liquid nitrogen temperatures; mask channel lengths; n-channel MOSFET; room temperature; series resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940464
