• DocumentCode
    1068289
  • Title

    Series resistance and effective channel length extraction of n-channel MOSFET at 77 K

  • Author

    Ortiz-Conde, Adelmo ; Liou, Juin J. ; Garcia Sanchez, Manuel ; Anderson, Richard L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL
  • Volume
    30
  • Issue
    8
  • fYear
    1994
  • fDate
    4/14/1994 12:00:00 AM
  • Firstpage
    670
  • Lastpage
    672
  • Abstract
    A simple method is presented to extract the effective channel length and series resistance of n-channel MOSFETs having 0.6-2.0 μm mask channel lengths at room and liquid nitrogen temperatures. Our results show that the effective channel length increases and the series resistance decreases when the temperature is reduced from 300 to 77 K
  • Keywords
    insulated gate field effect transistors; low-temperature techniques; 0.6 to 2.0 mum; 77 K; effective channel length extraction; liquid nitrogen temperatures; mask channel lengths; n-channel MOSFET; room temperature; series resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940464
  • Filename
    280676
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068289