• DocumentCode
    1068290
  • Title

    Spray-deposited ITO—Silicon SIS heterojunction solar cells

  • Author

    Ashok, S. ; Sharma, Panduranga P. ; Fonash, Stephen J.

  • Author_Institution
    Pennsylvania State University, University Park, PA
  • Volume
    27
  • Issue
    4
  • fYear
    1980
  • fDate
    4/1/1980 12:00:00 AM
  • Firstpage
    725
  • Lastpage
    730
  • Abstract
    A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type silicon using spray-deposited indium-tin-oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I layer have been optimized to yield the following photovoltaic parameters on 0.5-Ω . cm n-Si: V_{OC} = 0.52 V, J_{SC} = 31.5 mA/cm2(adjusted for Ag grid area), FF= 0.70 , and illuminated area η = 11.5 percent. The dark I-V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.
  • Keywords
    Amorphous materials; Chemicals; Conductors; Heterojunctions; Optical device fabrication; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Spraying;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19928
  • Filename
    1480721