DocumentCode
1068294
Title
Detailed modeling of inversion-layer solar cells
Author
Norman, Charles Edward ; Thomas, Raye E.
Author_Institution
Universidad Nacional del Centro del Peru, Huancayo, Peru
Volume
27
Issue
4
fYear
1980
fDate
4/1/1980 12:00:00 AM
Firstpage
731
Lastpage
737
Abstract
Numerical modeling of inversion-layer (IL) solar cells is described. The steady-state continuity equations are solved for both electrons and holes. A novel integrated recombination technique is applied to accurately find the one-dimensional current flow. Two-dimensional resistive and grid geometry effects are modeled to predict the output current-voltage curve for the cell. Modeled results are in excellent agreement with those measured for a real cell. The model is used to investigate the operation of IL cells and to determine how their performance can be improved through process changes. Practical AM1 efficiencies up to 17 percent are predicted and a theoretical maximum efficiency of 21 percent is calculated. Many of the modeling techniques and results can be applied to other solar-cell structures.
Keywords
Aluminum; Charge carrier processes; Equations; Fabrication; Geometry; Photovoltaic cells; Predictive models; Solid modeling; Spontaneous emission; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19929
Filename
1480722
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