DocumentCode :
1068294
Title :
Detailed modeling of inversion-layer solar cells
Author :
Norman, Charles Edward ; Thomas, Raye E.
Author_Institution :
Universidad Nacional del Centro del Peru, Huancayo, Peru
Volume :
27
Issue :
4
fYear :
1980
fDate :
4/1/1980 12:00:00 AM
Firstpage :
731
Lastpage :
737
Abstract :
Numerical modeling of inversion-layer (IL) solar cells is described. The steady-state continuity equations are solved for both electrons and holes. A novel integrated recombination technique is applied to accurately find the one-dimensional current flow. Two-dimensional resistive and grid geometry effects are modeled to predict the output current-voltage curve for the cell. Modeled results are in excellent agreement with those measured for a real cell. The model is used to investigate the operation of IL cells and to determine how their performance can be improved through process changes. Practical AM1 efficiencies up to 17 percent are predicted and a theoretical maximum efficiency of 21 percent is calculated. Many of the modeling techniques and results can be applied to other solar-cell structures.
Keywords :
Aluminum; Charge carrier processes; Equations; Fabrication; Geometry; Photovoltaic cells; Predictive models; Solid modeling; Spontaneous emission; Steady-state;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19929
Filename :
1480722
Link To Document :
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