DocumentCode
1068296
Title
Trajectory split method for Monte Carlo simulation of ion implantation
Author
Bohmayr, Walter ; Burenkov, Alexander ; Lorenz, Jurgen ; Ryssel, Heiner ; Selberherr, Siegfried
Author_Institution
Inst for Microelectron., Tech. Univ., Vienna, Austria
Volume
8
Issue
4
fYear
1995
fDate
11/1/1995 12:00:00 AM
Firstpage
402
Lastpage
407
Abstract
A new method for the acceleration of two- and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is presented. The trajectory split method ensures a much better statistical representation in regions with a dopant concentration several orders of magnitudes smaller than the maximum. As a result, the time required to perform a simulation with comparable statistical accuracy is drastically reduced. The advantages of the new approach have been confirmed by a thorough statistical analysis
Keywords
Monte Carlo methods; ion implantation; semiconductor process modelling; Monte Carlo simulation; crystalline targets; dopant concentration; ion implantation; statistical analysis; three-dimensional simulation; trajectory split method; two-dimensional simulation; Acceleration; Computational modeling; Crystallization; Electrons; Helium; Ion implantation; Microelectronics; Monte Carlo methods; Statistical analysis; Trajectory;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.475181
Filename
475181
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