Title :
Trajectory split method for Monte Carlo simulation of ion implantation
Author :
Bohmayr, Walter ; Burenkov, Alexander ; Lorenz, Jurgen ; Ryssel, Heiner ; Selberherr, Siegfried
Author_Institution :
Inst for Microelectron., Tech. Univ., Vienna, Austria
fDate :
11/1/1995 12:00:00 AM
Abstract :
A new method for the acceleration of two- and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is presented. The trajectory split method ensures a much better statistical representation in regions with a dopant concentration several orders of magnitudes smaller than the maximum. As a result, the time required to perform a simulation with comparable statistical accuracy is drastically reduced. The advantages of the new approach have been confirmed by a thorough statistical analysis
Keywords :
Monte Carlo methods; ion implantation; semiconductor process modelling; Monte Carlo simulation; crystalline targets; dopant concentration; ion implantation; statistical analysis; three-dimensional simulation; trajectory split method; two-dimensional simulation; Acceleration; Computational modeling; Crystallization; Electrons; Helium; Ion implantation; Microelectronics; Monte Carlo methods; Statistical analysis; Trajectory;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
