• DocumentCode
    1068314
  • Title

    GaAs-AlxGa1-xAs integrated twin-guide lasers with distributed Bragg reflectors

  • Author

    Kawanishi, H. ; Suematsu, Y. ; Kishino, M.

  • Author_Institution
    Department of Physical Electronics, Tokyo Institute of Technology
  • Volume
    13
  • Issue
    2
  • fYear
    1977
  • fDate
    2/1/1977 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    65
  • Abstract
    A GaAs-AlxGa1-xAs integrated twin-guide (ITG) laser with distributed Bragg reflectors (DBR) was fabricated. The DBR was in the form of a third-order grating which was chemically etched on the surface of the output waveguide. The ITG lasers with distributed Bragg reflectors (DBR-ITG lasers) operating at room temperature showed single mode oscillation up to 1.5 times the threshold current and the half-side external quantum efficiency was 1 ∼ 2 percent.
  • Keywords
    Chemical lasers; Distributed Bragg reflectors; Gallium arsenide; Gratings; Laser modes; Optical coupling; Optical resonators; Optical waveguides; Surface waves; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1977.1069270
  • Filename
    1069270