DocumentCode
1068314
Title
GaAs-Alx Ga1-x As integrated twin-guide lasers with distributed Bragg reflectors
Author
Kawanishi, H. ; Suematsu, Y. ; Kishino, M.
Author_Institution
Department of Physical Electronics, Tokyo Institute of Technology
Volume
13
Issue
2
fYear
1977
fDate
2/1/1977 12:00:00 AM
Firstpage
64
Lastpage
65
Abstract
A GaAs-Alx Ga1-x As integrated twin-guide (ITG) laser with distributed Bragg reflectors (DBR) was fabricated. The DBR was in the form of a third-order grating which was chemically etched on the surface of the output waveguide. The ITG lasers with distributed Bragg reflectors (DBR-ITG lasers) operating at room temperature showed single mode oscillation up to 1.5 times the threshold current and the half-side external quantum efficiency was 1 ∼ 2 percent.
Keywords
Chemical lasers; Distributed Bragg reflectors; Gallium arsenide; Gratings; Laser modes; Optical coupling; Optical resonators; Optical waveguides; Surface waves; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1977.1069270
Filename
1069270
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