Title :
A manufacturable process to improve thermal stability of 0.25-μm cobalt silicided poly gate
Author :
Wang, Qingfeng ; Lauwers, Anne ; Deweerdt, Bruno ; Verbeeck, Rita ; Loosen, Freddy ; Maex, Karen
Author_Institution :
IMEC, Leuven, Belgium
fDate :
11/1/1995 12:00:00 AM
Abstract :
A CoSi2 salicidation process using a thin titanium capping layer is developed to improve the thermal stability of deep submicron CoSi2/poly stacks. 50 nm CoSi2 was uniformly formed on 0.25-μm wide poly lines. The electrical results show that the lines formed by a capping process using Ti can withstand higher thermal treatment (750° C for 30 min) without significant degradation. This work shows that the modified CoSi2 process should be considered for 0.25-μm CMOS applications
Keywords :
CMOS integrated circuits; ULSI; circuit stability; cobalt compounds; integrated circuit metallisation; 0.25 micron; 30 min; 50 nm; 750 degC; CMOS applications; CoSi2; capping layer; deep submicron stacks; manufacturable process; salicidation process; thermal stability; thermal treatment; CMOS process; Cobalt; Conductivity; Electric variables measurement; Furnaces; Manufacturing processes; Silicidation; Silicides; Thermal stability; Titanium;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
