DocumentCode :
1068372
Title :
Physics underlying the performance of back-surface-field solar cells
Author :
Fossum, Jerry G. ; Nasby, Robert D. ; Pao, Shing
Author_Institution :
University of Florida, Gainesville, FL
Volume :
27
Issue :
4
fYear :
1980
fDate :
4/1/1980 12:00:00 AM
Firstpage :
785
Lastpage :
791
Abstract :
A description of the physics of back-surface-field (BSF) solar cells is presented, in which several key approximations, valid for effective BSF cells, have been used to express the results of the analysis in ways that make them useful in understanding the performance of high-efficiency BSF cells. A silicon p+-n-n+BSF solar cell, developed in conjunction with the theoretical treatment, provides experimental support for the theory. Measured current-voltage characteristics, together with the analysis, are used to describe the important physical mechanisms that control the performance of the BSF solar cell. For example, the analysis enables the determinations of the carrier lifetimes in the base region and of the effective surface recombination velocity at the low-high junction.
Keywords :
Charge carrier processes; Current density; Current measurement; Performance analysis; Photovoltaic cells; Physics; Silicon; Spontaneous emission; Surface resistance; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.19937
Filename :
1480730
Link To Document :
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