DocumentCode :
1068412
Title :
Q-switching of semiconductor lasers
Author :
Tsukada, Toshihisa ; Tang, Chung L.
Author_Institution :
Central Research Laboratory, Ltd., Tokyo, Japan
Volume :
13
Issue :
2
fYear :
1977
fDate :
2/1/1977 12:00:00 AM
Firstpage :
37
Lastpage :
43
Abstract :
A scheme for 
-switching semiconductor lasers is proposed and analyzed. The method is based upon electrooptic switching of the Bragg reflectivity of the grating reflectors forming the cavity of the semiconductor laser. The basic configuration, the operating principles, and the dynamic behavior of these lasers are described. Although the maximum initial inversion in this laser system is limited to a rather low value, the peak output power is found to be higher than the value usually obtained in a CW GaAs double-heterostructure (DH) laser by two orders of magnitude. A pulsewidth shorter than 100 ps is shown to be obtainable.
-switching semiconductor lasers is proposed and analyzed. The method is based upon electrooptic switching of the Bragg reflectivity of the grating reflectors forming the cavity of the semiconductor laser. The basic configuration, the operating principles, and the dynamic behavior of these lasers are described. Although the maximum initial inversion in this laser system is limited to a rather low value, the peak output power is found to be higher than the value usually obtained in a CW GaAs double-heterostructure (DH) laser by two orders of magnitude. A pulsewidth shorter than 100 ps is shown to be obtainable.Keywords :
Bragg gratings; DH-HEMTs; Gallium arsenide; Lasers and electrooptics; Power generation; Power lasers; Power semiconductor switches; Reflectivity; Semiconductor lasers; Space vector pulse width modulation;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1977.1069280
Filename :
1069280
Link To Document :
