Title :
A self-biased feedback-controlled pull-down emitter follower for high-speed low-power bipolar logic circuits
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
A feedback-controlled active-pull-down emitter follower that is self-biased at a low steady-state current and allows the collector dotting and emitter dotting is proposed for high-speed low-power bipolar/BiCMOS digital logic circuits. The push-pull operation of this emitter follower is precisely controlled by a feedback mechanism and does not require any extra out-of-phase signal other than the emitter-follower input from the logic stage. Simulation results based on a 0.5-μm advanced Si-bipolar technology show that the pull-down delay and drive capability of a loaded 1-mW feedback-controlled pull-down ECL gate are improved to the pull-up levels, 2.7 and 10 times better than those of the conventional resistor-pull-down ECL circuit, respectively
Keywords :
BiCMOS integrated circuits; VLSI; bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; 0.5 micron; 1 mW; ECL gate; advanced Si-bipolar technology; bipolar/BiCMOS digital logic circuits; collector dotting; drive capability; emitter dotting; feedback mechanism; high-speed low-power bipolar logic circuits; pull-up levels; push-pull operation; self-biased feedback-controlled pull-down emitter follower; BiCMOS integrated circuits; Circuit simulation; Coupling circuits; Delay; Diodes; Feedback circuits; Logic circuits; Steady-state; Timing; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
