مرکز منطقه ای اطلاع رساني علوم و فناوري

Abstract :

The photochemical properties of a diazoquinone/novolak resist system were studied over a wide range of material and processing parameters in order to determine the optimum values for a given application. These resists are representative of the commercial positive-working photoresists being used for high-resolution lithography. The solubility of the resist in an alkaline developer depends on exposure E as $\\Delta g^{-1} = [g_{0}(E/E_{e})^{m}]^{-1} + [\\Delta g_{\\infty}]^{-1}$ where the net development rate ( $\\Delta g$ ) is the difference between solubility rates of the exposed ( $g$ ) and unexposed (g0) sample. Three of these parameters characterize the lithographic response of the resist. They depend mainly on the resist composition but not on the processing conditions. Eeis a measure of the sensitivity and ranges from 10 to 20 mJ/cm²of 405-nm light for useful resist formulations. The contrast parameter ( $m$ ) increases slowly with sensitizer concentration while the saturated solubility ratio ( $g_{\\infty}/g_{0}$ ) inereases very rapidly. The fourth parameter (g0) depends strongly on processing parameters. It can readily be set to provide the desired development time, e.g., by adjusting the developer strength. On a more fundamental level, it is found that the dependence of the solubility on exposure can be expressed in a unified manner for all the resist formulations studied as $g \\approx g_{0} \\exp (2 \\times 10^{-20} n_{e})$ where neis the number of exposed sensitizer molecules per cubic centimeter.