Title :
Relation between incremental intrinsic capacitances and transconductances in MOS transistors
Author :
Tsividis, Yannis P.
Author_Institution :
Columbia University, New York, NY, USA
fDate :
5/1/1980 12:00:00 AM
Abstract :
The ratio of intrinsic substrate and gate capacitances is related to the ratio of substrate transconductance to gate transconductance for a long-channel MOS transistor in strong inversion. It is shown that under certain assumptions the two ratios are approximately equal.
Keywords :
Capacitance; Computational efficiency; Computer simulation; Digital circuits; Electronic circuits; MOSFETs; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19961
