• DocumentCode
    1068707
  • Title

    Diffusion profiling using the graded C(V) method

  • Author

    Shappir, J. ; Kolodny, A. ; Shacham-Diamand, Y.

  • Author_Institution
    Hebrew University, Jerusalem, Israel
  • Volume
    27
  • Issue
    5
  • fYear
    1980
  • fDate
    5/1/1980 12:00:00 AM
  • Firstpage
    993
  • Lastpage
    995
  • Abstract
    A simple and quick technique for determination of impurity-diffusion profiles in semiconductors from MOS C(V) measurements on a gradually etched surface is presented and analyzed, This technique is most useful for slowly varying profiles in the range of 1016-5 × 1018cm-3. Experimental profiles are given for P in Si, and for Cd in InSb.
  • Keywords
    Area measurement; Capacitance measurement; Dielectric measurements; Dielectrics and electrical insulation; Etching; Frequency measurement; MOS capacitors; Metal-insulator structures; P-n junctions; Semiconductor impurities;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19970
  • Filename
    1480763
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068707