• DocumentCode
    1068728
  • Title

    Correlated e-b and c-b junction burst noise

  • Author

    Knott, K.F.

  • Author_Institution
    University of Salford, Salford, England
  • Volume
    27
  • Issue
    5
  • fYear
    1980
  • fDate
    5/1/1980 12:00:00 AM
  • Firstpage
    997
  • Lastpage
    998
  • Abstract
    It has been found that the total burst noise current in a bipolar transistor can be due to a single source which gives rise to contributions both from the e-b and the c-b junctions. Measurements on such a transistor show that the ratio of these contributions is inverted if the transistor is inverted. A tentative physical explanation is given for the phenomenon.
  • Keywords
    Circuit noise; Circuit testing; Density measurement; Doping profiles; Electron devices; Equivalent circuits; Implants; MOSFET circuits; Solid state circuits; Virtual manufacturing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.19972
  • Filename
    1480765
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1068728