Optimization of material parameters in 1.3-μm InGaAsN-GaAs lasers

Author

Tomic, S. ; O´Reilly, E.P.

Author_Institution

Dept. of Phys., Surrey Univ., Guildford, UK

Volume

15

Issue

1

fYear

2003

Firstpage

6

Lastpage

8

Abstract

We use a 10-band k/spl middot/p Hamiltonian to investigate gain characteristics of 1.3- μm InGaAsN-GaAs 7-nm quantum-well lasers as a function of indium and nitrogen content. The parameters used were obtained by comparison with experimental transition energy data and fitting to measured spontaneous-emission line broadening. We conclude that optimum device performance is obtained by including the minimum amount of nitrogen necessary to prevent strain relaxation at the given well thickness.

Keywords

III-V semiconductors; band structure; carrier density; current density; gallium arsenide; indium compounds; k.p calculations; quantum well lasers; semiconductor quantum wells; spectral line broadening; spontaneous emission; 1.3 micron; 10-band k/spl middot/p Hamiltonian; 7 nm; In content; InGaAsN-GaAs; InGaAsN-GaAs quantum-well lasers; N content; band structure; gain characteristics; material parameters optimization; optimum device performance; radiative current density; sheet-carrier density; spontaneous emission line broadening; strain relaxation prevention; transition energy data; Capacitive sensors; Indium; Laser theory; Laser transitions; Nitrogen; Optical materials; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.805794

Filename

1159044