DocumentCode
1068734
Title
Method to extract MOSFET substrate resistance using DC data of base resistance in parasitic BJT
Author
Jung, D. ; Cha, J.-Y. ; Cha, J.-Y. ; Lee, Sang-Rim
Author_Institution
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin
Volume
45
Issue
2
fYear
2009
Firstpage
97
Lastpage
98
Abstract
A new DC method is proposed to extract the substrate resistance in MOSFETs by using current-dependent base resistance of parasitic lateral bipolar junction transistor without a complex RF extraction method. The extracted substrate resistance values using the new method match well with those using the RF one, verifying the accuracy of the new method.
Keywords
MOSFET; bipolar transistors; electric resistance; DC data; MOSFET; current-dependent base resistance; parasitic BJT; parasitic lateral bipolar junction transistor; substrate resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20091975
Filename
4752640
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