DocumentCode :
1068734
Title :
Method to extract MOSFET substrate resistance using DC data of base resistance in parasitic BJT
Author :
Jung, D. ; Cha, J.-Y. ; Cha, J.-Y. ; Lee, Sang-Rim
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin
Volume :
45
Issue :
2
fYear :
2009
Firstpage :
97
Lastpage :
98
Abstract :
A new DC method is proposed to extract the substrate resistance in MOSFETs by using current-dependent base resistance of parasitic lateral bipolar junction transistor without a complex RF extraction method. The extracted substrate resistance values using the new method match well with those using the RF one, verifying the accuracy of the new method.
Keywords :
MOSFET; bipolar transistors; electric resistance; DC data; MOSFET; current-dependent base resistance; parasitic BJT; parasitic lateral bipolar junction transistor; substrate resistance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20091975
Filename :
4752640
Link To Document :
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