DocumentCode :
1068749
Title :
Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers
Author :
Grillot, F. ; Thedrez, B. ; Gauthier-Lafaye, O. ; Martineau, M.F. ; Voiriot, V. ; Lafragette, J.L. ; Gentner, J.L. ; Silvestre, L.
Author_Institution :
ALCATEL+OPTO, Alcatel Res. & Innovation, Marcoussis, France
Volume :
15
Issue :
1
fYear :
2003
Firstpage :
9
Lastpage :
11
Abstract :
The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss.
Keywords :
distributed feedback lasers; laser feedback; light coherence; optical transmitters; quantum well lasers; 1.3 micron; 2.5 Gb/s transmission; 2.5 Gbit/s; InAsP-InGaAsP; International Telecommunication Union recommended return loss; chip to chip variation; coherence-collapse threshold; compressively strained InAsP quantum wells; facet phase effects; grating coefficient; isolator-free transmission; monomode antireflection/high reflection distributed-feedback lasers; monomode semiconductor DFB lasers; normalized Bragg deviation; optical feedback; Coatings; Distributed feedback devices; Fiber lasers; Gratings; Laser feedback; Laser modes; Laser theory; Optical feedback; Optical reflection; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2002.805771
Filename :
1159045
Link To Document :
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